MLS2016 SOT-23

Guangdong Jiaxun Electronics MLS2016 20V/3.2A N-Channel MOSFET Product Description Product Overview The MLS2016 is an N-channel power device based on trench‑type low‑voltage (LV) MOSFET technology, featuring a 20V breakdown voltage and a continuous current rating of 3.2A. Through optimized design, it achieves an ultra‑low on‑state resistance (RDS(ON)), supporting high‑speed switching and efficient power management, making it suitable for PWM control and load‑switching applications. The device is packaged in SOT‑23, meeting industrial‑grade reliability standards while balancing performance with compact layout requirements. Key Features High‑Performance Parameters Voltage and Current Ratings: - Drain‑Source Voltage (VDS): 20V (maximum) - Continuous Drain Current (ID): 3.2A (at VGS = 10V, TC = 25°C) - Pulse Drain Current (IDM): 10A (at TC = 25°C) Ultra‑Low On‑State Resistance: - RDS(ON): 47mΩ (at VGS = 4.5V, ID = 3.6A) / 65mΩ (at VGS = 2.5V, ID = 3.1A) High‑Speed Switching Characteristics: - Turn‑On Delay Time: 7ns - Turn‑Off Delay Time: 15ns - Total Gate Charge (Qg): 3.6nC (at VDS = 10V, ID = 3.2A) Electrical Reliability - Gate‑Source Voltage Rating (VGS): ±10V (maximum) - Drain‑Source Breakdown Voltage (BV DSS): 20V (at VGS = 0V, ID = 250μA) Low Leakage Currents: - Zero‑Gate‑Bias Drain Current (IDSS): <1μA (at VDS = 20V) - Gate Leakage Current (IGSS): ±100nA (at VGS = ±10V) Temperature Performance - Operating Junction Temperature (TJ): −50°C to 150°C - Thermal Resistance (RθJA): 178°C/W (under steady‑state conditions) - Maximum Power Dissipation (PD): 0.7W (at TC = 25°C) Application Areas - PWM Control: Motor speed regulation, LED drivers - Power Management: DC‑DC converters, load switches - Portable Devices: Power banks, USB Type‑C interface controllers - Industrial Systems: Relay drivers, power modules for automation equipment Packaging and Ordering - Package Type: SOT‑23 (surface‑mount package; dimensions provided in the datasheet) - Packaging Specifications: - Minimum Reel Quantity: 3,000 units per tape-and-reel - Full Carton Quantity: 180,000 units - Part Number Designation: MLS2016 (package marking “WT6X,” where X denotes the production month) Product Advantages - High Efficiency: Ultra‑low on‑state resistance reduces thermal losses, enhancing overall system efficiency. - Fast Response: Nanosecond‑level switching speeds meet the demands of high‑frequency PWM circuits. - Superior Reliability: Wide operating temperature range and industrial‑grade voltage ratings ensure robust performance in harsh environments. - Compact Layout: SOT‑23 packaging saves PCB space, enabling high‑density integration. Applicable Scenarios The MLS2016 is widely used in power management modules for consumer electronics, industrial controls, new energy devices, and portable products, making it an ideal choice for optimizing power density and energy efficiency.

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Product Description

Guangdong Jiaxun Electronics MLS2016 20V/3.2A N-Channel MOSFET Product Description

Product Overview
The MLS2016 is an N‑channel power device based on trench‑type low‑voltage (LV) MOSFET technology, featuring a 20 V breakdown voltage and a continuous current rating of 3.2 A. Through optimized design, it achieves an ultra‑low on‑state resistance (RDS(ON)), enabling high‑speed switching and efficient power management, making it well suited for PWM control and load‑switching applications. The device is packaged in SOT‑23 and meets industrial‑grade reliability standards, balancing performance with compact layout requirements.

Core Features

High-performance parameters
- Withstand Voltage and Current Capability ：
  - Drain-to-source voltage (VDS): 20 V (maximum)
  - Continuous Drain Current (ID): 3.2 A (VGS = 10 V, TC = 25°C)
  - Pulse Drain Current (IDM): 10 A (TC = 25°C)
- Ultra-low on-resistance ：
  - RDS(ON) : 47 mΩ (VGS = 4.5 V, ID = 3.6 A) / 65 mΩ (VGS = 2.5 V, ID = 3.1 A)
- High-speed switching characteristics ：
  - Switch delay time: 7ns (Conduction) / 15ns (Off)
  - Total gate charge (Qg): 3.6 nC (VDS = 10 V, ID = 3.2 A)
Electrical Reliability
- Gate–source voltage rating (VGS): ±10 V (maximum)
- Drain-to-source breakdown voltage (BV DSS): 20 V (VGS = 0 V, ID = 250 μA)
- Low leakage current:
  - Drain-to-source leakage current at zero gate voltage (IDSS): <1 μA (VDS = 20 V)
  - Gate-to-source leakage current (IGSS): ±100 nA (VGS = ±10 V)
Temperature adaptability
- Junction operating temperature (TJ): -50°C to 150°C
- Thermal resistance (RθJA): 178 °C/W (under steady-state conditions)
- Maximum Power Dissipation (PD): 0.7 W (TC = 25°C)

Application areas

PWM control : Motor speed control, LED driver
Power Management : DC-DC converters, load switches
Portable device : Power bank, USB Type-C port control
Industrial system : Relay-driven, power supply module for automation equipment

Packaging and Ordering

Package type : SOT-23 (surface-mount package; see the datasheet for dimensions)
Packaging Specifications ：
- Minimum packaging: 3,000 units per tape reel
- Carton quantity: 180,000 pieces
Model designation : MLS2016 (package marking “WT6X,” where X denotes the month of manufacture)

Product Advantages

High efficiency and energy saving : Ultra-low on-resistance reduces thermal losses and improves system efficiency.
Quick response : Nanosecond-level switching speed, tailored to meet the demands of high-frequency PWM circuits.
High reliability : Wide-temperature-range design and industrial-grade voltage resistance, ensuring compatibility with harsh operating environments.
Compact layout : The SOT-23 package saves PCB space and supports high-density integration.

Applicable Scenarios
Widely used in power management modules for consumer electronics, industrial control systems, new energy equipment, and portable devices, it is an ideal choice for optimizing power density and efficiency.

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