MLS2300A SOT-23

Key parameters: VDS: 20 V ID: [4.5 A, 3.6 A (TA = 70°C)], RDS(ON): {VGS = 4.5 V ≤ 25 mΩ, VGS = 2.5 V ≤ 32 mΩ, VGS = 1.8 V ≤ 46 mΩ} VGS: ±10 V IDM: 18 A PD: [1 W (TA = 25°C), 0.6 W (TA = 70°C)], RθJA: 125 °C/W TJ, TSTG: −55 to +150 °C

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Product Description

The MLS2300A is an N-channel enhancement-mode field-effect transistor (MOSFET) that utilizes Trench Power MV MOSFET technology, offering high power and current-handling capabilities.

Its maximum drain‑source voltage is 20 V, and its maximum drain current is 4.5 A. The on‑resistance varies with gate‑source voltage as follows: less than 25 mΩ at VGS = 4.5 V, less than 32 mΩ at VGS = 2.5 V, and less than 46 mΩ at VGS = 1.8 V.

This product has passed 100% VDS testing, ensuring its reliability.

The device is packaged in an SOT‑23 package and is suitable for applications such as PWM control and load switching. The absolute maximum ratings are: drain–source voltage 20 V, gate–source voltage ±10 V, pulsed drain current 18 A, and total power dissipation 1 W (at 25 °C).

The key electrical characteristics also include static parameters such as a breakdown voltage of 20 V, a gate‑to‑source leakage current of 1 μA at zero gate voltage, and a threshold voltage ranging from 0.45 to 1.0 V; as well as dynamic parameters including an input capacitance of 418 pF, an output capacitance of 82 pF, and a reverse transfer capacitance of 70 pF.

In addition, switch parameters such as a total gate charge of 6.05 nC and an on‑state turn‑on delay of 4.2 ns are specified. The product is suitable for electronic devices that demand high reliability and superior performance.

Main parameters:
VDS: 20V
ID: [4.5A, 3.6A (TA=70℃)],
RDS(ON): {VGS=4.5V=<25mohm, VGS=2.5V=<32mohm, VGS=1.8V=<46mohm}
VGS: ±10 V
IDM: 18A
PD: [1 W (TA = 25°C), 0.6 W (TA = 70°C)],
RθJA: 125°C/W
TJ, TSTG: -55 to +150°C

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