Silicon carbide rectifier bridge technology ushers in a new era of high-voltage, high-efficiency performance.

As power electronic devices rapidly evolve toward higher voltage, higher frequency, and higher‑temperature operating environments, conventional silicon‑based rectifier bridges can no longer meet stringent performance requirements. As a leading domestic supplier of power devices, Guangdong Jiaxun Electronics Co., Ltd. has leveraged its independently developed silicon carbide rectifier bridge and silicon carbide soft‑bridge technologies to successfully overcome material and process bottlenecks, delivering efficient and reliable solutions for industrial power supplies, new energy systems, aerospace, and other critical applications.

Introduction: Silicon Carbide Technology Empowers a Revolution in Power Electronics

As power electronic devices rapidly evolve toward higher voltage, higher frequency, and higher-temperature operating environments, traditional silicon-based rectifier bridges can no longer meet the stringent performance requirements. As a leading domestic supplier of power devices, Guangdong Jiaxun Electronics Co., Ltd. leverages its independently developed… Silicon Carbide Rectifier Bridge and Silicon Carbide Soft-Switching Bridge Through technological innovation, we have successfully overcome material and process bottlenecks, delivering high‑efficiency, reliable solutions for industries such as industrial power supplies, new energy, and aerospace.

 

Technological Advantage: A Revolutionary Breakthrough in Silicon Carbide Rectifier Bridges

1. Withstands high pressure and high temperatures, delivering performance far surpassing that of conventional silicon-based products.

Jiaxun Electronics’ silicon carbide rectifier bridges (such as the RHBL10010 series) utilize 4H-type single-crystal silicon carbide epitaxial layer The design features a graded P+-N-N+ base region structure that significantly enhances breakdown voltage capability—supporting voltages above 1200 V—while its superior high‑temperature performance (with junction temperatures exceeding 300 °C) ensures stable operation under extreme conditions. Compared with conventional silicon‑based devices, it reduces reverse leakage current by a factor of ten, lowers forward voltage drop, and improves efficiency by up to 30%.

2. Multi-layer packaging and innovative thermal management ensure high reliability.

Combine Iron-nickel-cobalt alloy frame and Aluminum carbide ceramic sheet The package design employs a brazing process to secure the Cu–Mo–Cu substrate to the chip, optimizing the thermal path. Combined with a vacuum‑soldering profile and nano‑silver paste soldering technology, it achieves a high‑temperature‑resistant (400°C) and low‑thermal‑resistance (50°C/W) stable interconnection, effectively reducing the chip junction temperature and extending device lifetime.

 

3. Outstanding dynamic performance, effectively suppressing surges and oscillations.

Based on the Pulsed Blocking Rectifier (PBR) architecture, a JFET‑like channel is employed to modulate the barrier, thereby circumventing the interface issues inherent in conventional Schottky diodes. Coupled with PECVD multilayer film technology, the reverse recovery time is reduced to below 350 ns, and surge current suppression is improved by a factor of ten, making it ideally suited for high‑frequency switching power supplies and phase‑shift full‑bridge converters.

 

Innovative Processes: Jiaxun’s Core Competitiveness

 

1. Coating Treatment and Brazing Process

The metal components feature a multi-layer zinc–tin–gold plating, enhancing corrosion resistance by 50%; the brazing process ensures mechanical stability at high temperatures up to 260°C, in compliance with the J-STD-020 standard.

 

2. Flash Sintering Technology and Rapid Sintering

By constructing conductive pathways between silicon carbide particles via a PyC bridge, sintering is completed within 60 seconds, reducing porosity to 14.79% and significantly lowering Joule heating losses.

 

3. Tungsten Filament Sacrificial Protection Mechanism

A tungsten‑filament fuse is integrated into the high‑speed rectifier bridge to rapidly interrupt the current path during overcurrent conditions, with a conductive adhesive ensuring millisecond‑level response and safeguarding system integrity.

 

 

 

 

Outlook: Continuously Pioneering the Cutting Edge of Silicon Carbide Technology

 

Guangdong Jiaxun Electronics has long been committed to the silicon carbide sector and will, in the future, focus on… Silicon carbide soft bridge R&D efforts are focused on further optimizing dynamic loss and EMI performance in high-frequency applications. At the same time, we are expanding the application of flash‑sintering technology to the repair of high‑temperature‑resistant components in spacecraft, thereby supporting the localization and self‑reliance of China’s advanced equipment.

 

Choose Jiaxun—choose efficiency and reliability!

 

(This article is originally authored by Guangdong Jiaxun Electronics Co., Ltd. Please cite the source when reprinting.)