Guangdong Jiaxun Electronics LT30N03AD Field-Effect Transistor: 30 A / 30 V Mid‑Low Voltage MOSFET — Technical Analysis and Application Guide for TO‑252 Package
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Release Date:
2025-04-02
Product Overview
Launched by Guangdong Jiaxun Electronics LT30N03AD field-effect transistor , is a high-performance MOSFET designed specifically for medium- and low-voltage applications, supporting a continuous current of up to 30 A and a breakdown voltage of 30 V. It employs TO-252 (DPAK) package It combines a compact form factor with efficient thermal management, making it ideal for applications such as power management, motor drives, and DC‑DC converters, while meeting the diverse requirements of industrial equipment, consumer electronics, and the new energy sector.
Key Specifications and Advantages
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Electrical performance
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Voltage and current : 30 V withstand voltage, 30 A continuous current (at 25°C), with a transient peak current of up to 60 A.
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On-resistance : As low as 7 mΩ (@Vgs = 10 V), significantly reducing conduction losses and improving system efficiency.
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Switching speed : Fast switching characteristics (td(on)=10 ns, td(off)=20 ns), suitable for high-frequency circuit design.
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Package characteristics (TO-252)
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Thermal Design : The metal backplate is directly soldered to the PCB, enabling rapid heat dissipation through a large‑area copper foil and reducing thermal resistance (RθJA ≈ 62 °C/W).
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Easy to install : Surface-mount packaging is compatible with automated manufacturing, saves space, and is suitable for high-density PCB layouts.
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Reliability : Passes a 100% high-temperature aging test, with an operating temperature range of -55°C to +175°C, making it suitable for harsh environments.
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Typical application scenarios
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Power module : Compatible with switch-mode power supplies and synchronous rectification circuits, enhancing conversion efficiency.
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Motor Control : Drives small DC motors and stepper motors, supporting PWM speed control.
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Battery Management System : Used in lithium‑battery protection boards and charge/discharge control to ensure safety and stability.
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LED lighting : Constant-current drive scheme, reducing heat generation and extending luminaire lifespan.
Package Technical Data (TO-252)
| Parameter | Specifications |
|---|---|
| Package type | TO-252 (DPAK) |
| Pin Definitions | 1-Gate (G), 2-Drain (D), 3-Source (S) |
| Size | 6.5 mm × 6.2 mm × 2.3 mm (length × width × height) |
| Pad Design Recommendations | PCB copper foil area ≥ 2 cm²; a copper thickness of 1 oz is recommended. |
| Storage conditions | Humidity < 40%, temperature -55°C to +150°C |
Frequently Asked Questions (Q&A)
Q1: Can the LT30N03AD replace a MOSFET with the same specifications?
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It is compatible with most TO‑252‑package MOSFETs rated at 30 V/30 A, but you must verify that the gate‑source voltage (Vgs), on‑state resistance, and switching speed meet your circuit requirements.
Q2: How can heat dissipation be optimized in high-temperature environments?
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Increase the copper foil area on the PCB or add a heat sink; avoid continuous full‑load operation and consider derating (e.g., current ≤ 20 A at 85°C).
Q3: What are the possible causes of MOSFET failure?
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Common causes include Vgs overvoltage breakdown, electrostatic discharge, current overload, and inadequate heat dissipation. It is recommended to incorporate a TVS protection diode and adhere strictly to the datasheet specifications during design.
Q4: How do you assess batch quality?
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Jiaxun Electronics provides complete batch test reports, including RoHS certification. Users can verify this information by contacting our staff or reaching out to an authorized distributor.
Purchase and Technical Support
Guangdong Jiaxun Electronics provides original‑manufacturer warranty service for the LT30N03AD. You can purchase through authorized channels by contacting customer service, ensuring genuine products and technical support. For product selection guidance or technical documentation, please visit the Product Center on our official website for detailed information.
Keywords:
30A 30V MOSFET,LT30N03AD parameters,,TO-252 package,Medium- and low-voltage field-effect transistor,Medium- and low-voltage field-effect transistor
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