Electrical Limit Parameters Collector–Emitter Voltage (VCESO): 500 V Collector Peak Current (ICM): 1 A (pulse width < 5 ms) Maximum Power Dissipation (PTOT): 500 mW (at an ambient temperature of 25°C) Electrical Characteristics Collector Cut-off Current (ICBO): < 10 μA (VCB = 500 V) Saturation Voltage (VCE(sat)): ≤ 0.3 V (IC = 50 mA) DC Current Gain (hFE): 100–300 (IC = 50 mA) Thermal Management Thermal Resistance (Rth): 250 °C/W (based on a 1 cm² PCB heat-dissipating area) Mechanical and Packaging

S8550 SOT-23 This NPN bipolar transistor is suitable for both linear and switching applications. It comes in an SOT-23 package, making it ideal for low-power surface-mount applications.

S8050 SOT-23 This NPN bipolar transistor is suitable for both linear and switching applications. It comes in an SOT-23 package, making it ideal for low-power surface-mount applications.

MMBTA44 SOT-23 Surface-mount transistor Transistor type: NPN Collector–emitter breakdown voltage (Vceo): 400 V Collector current (Ic): 100 mA Power dissipation (Pd): 350 mW DC current gain (hFE@Ic, Vce): 50 @ 10 mA, 10 V