SiC Schottky Barrier Rectifier Features • Reverse withstand voltage: 1200 V • Zero reverse recovery current • High operating frequency • Switching characteristics unaffected by: - Temperature • Fast switching speed • Positive temperature coefficient of forward voltage drop Applications • Switch-mode power supplies, AC/DC converters • Power factor correction • Motor drives • Photovoltaic inverters and wind turbines Advantages • Extremely low switching losses • Higher efficiency • Reduced reliance on heat sinks • No thermal runaway when devices are paralleled Features ● VDS: 1200 V ● ID: 105 A ● RDS(on) (VGS = 10 V): 18 mΩ ● Third-generation SiC MOSFET technology ● Optimized package with separate drive-source pins ● Creepage distance between drain and source: 8 mm ● High blocking voltage, low on-state resistance ● Low capacitance for high-speed switching ● Fast intrinsic diode with low reverse recovery charge (Qrr) Applications ● Motor drives ● Electric vehicle charging stations ● High-voltage DC/DC converters

Features ● VDS 1200V ● ID 32A ● RDS(on) (VGS=10V) 80mΩ ● Third-generation SiC MOSFET technology ● Optimized package with separate driver-source pins ● Creepage distance between drain and source: 8mm ● High breakdown voltage, low on-resistance ● Low-capacitance, high-speed switching ● Fast intrinsic diode with low reverse recovery charge (Qrr) Applications ● Motor drives ● Electric vehicle charging stations ● High-voltage DC/DC converters