Product Center


■General Features ●V-DS = -30 V, I-D = -4.3 A ▲R-DS(on) < 90 mΩ @ V-DS = -4.5 V ▲R-DS(on) < 52 mΩ @ V-GS = -10 V ●High power and current-handling capability ●Lead-free compliant ●Surface-mount package Category: P-channel Enhancement-mode Power MOSFET Applications: [PWM Applications] [Load Switching]

Product Introduction of Guangdong Jiaxun Electronics Co., Ltd. MLS3415E – 20V / -5A P-Channel MOSFET Product Overview The MLS3415E is a P-channel MOSFET based on advanced trench technology, specifically designed for high-performance power management and energy-efficient systems. Its key advantages include lower on-state resistance (RDS(on)) and enhanced voltage tolerance, making it ideal for high-voltage, high-reliability applications such as industrial power modules and precision electronic equipment. Key Features Lower On-State Resistance: RDS(on) typical value: 37 mΩ (at VGS = −4.5 V, ID = −4 A), with a maximum of 45 mΩ, significantly reducing power losses and improving system efficiency. High-Voltage Tolerance: Drain-to-source breakdown voltage: −20 V; gate-to-source voltage range: ±12 V, supporting more demanding voltage environments. Efficient Thermal Design: Maximum power dissipation: 1.5 W; thermal resistance: 90 °C/W (junction to ambient), outperforming comparable products in heat dissipation. Fast Switching Performance: Total gate charge (Qg): 9.5 nC; short switching times (e.g., rise time: 8.9 ns), suitable for high-frequency applications. Typical Applications Industrial-grade power management systems (such as DC-DC converters and motor drives) Power modules for high-resolution video displays Battery protection and charge/discharge control circuits Load switches for communication equipment Key Parameters Parameter | Condition | Typical Value | Maximum Value | Unit ---|---|---|---|--- Drain-to-source voltage (VDS) | — | −20 V | −20 V | V Continuous drain current (ID) | TC = 25 °C | — | −5 A | A On-state resistance (RDS(on)) | VGS = −4.5 V, ID = −4 A | 37 mΩ | 45 mΩ | mΩ Total gate charge (Qg) | VDS = −10 V, ID = −4 A | 9.5 nC | — | nC Thermal resistance (RθJA) | Junction-to-ambient thermal resistance | 90 | — | °C/W Package and Packaging Information Package type: SOT-23 (marked as R15) Packaging specifications: Minimum packaging: 3,000 units per reel (7-inch tape-and-reel) Inner box: 45,000 units Outer carton: 180,000 units Mechanical dimensions: Conform to SOT-23 standards, compatible with automated mounting; detailed dimensions are provided in the technical documentation. Quality and Reliability Operates within an industrial temperature range (storage temperature: −55 °C to 150 °C), ensuring suitability for extreme environmental conditions. Undergoes rigorous dynamic testing (including switching times and capacitance characteristics) to guarantee stability under high-frequency operation. Additional Technical Details and Supporting Diagrams Complete parameter curves (output characteristics, gate charge curves, safe operating area) and package drawings are available in the downloadable technical documentation. Guangdong Jiaxun Electronics Co., Ltd. Driven by innovation to deliver performance, we specialize in high-reliability power device solutions!

Product Introduction of Guangdong Jiaxun Electronics Co., Ltd. MLS3415A – 19V / -5A P-Channel MOSFET Product Overview The MLS3415A is a P-channel MOSFET designed with advanced trench technology, optimized for high-efficiency, low-power applications. Its key advantages include an extremely low on-resistance (RDS(on)) and minimal gate charge, significantly improving system efficiency and making it ideal for high-density power management and precision electronic devices. Key Features Low On-Resistance: RDS(on) is as low as 35 mΩ at VGS = −4.5 V, ID = −3 A, with a maximum of 50 mΩ, effectively reducing conduction losses. Low Gate Charge: Total gate charge (Qg) is only 8.5 nC, enabling fast switching and enhancing performance in high-frequency applications. High Reliability: Drain-to-source breakdown voltage: −19 V; maximum junction temperature: 150°C, ensuring suitability for demanding operating environments. Compact Package: SOT-23 package, small footprint, ideal for space-constrained PCB layouts. Typical Applications Power modules for video displays Power management in portable devices (DC-DC converters, load switches) Battery protection circuits Industrial control systems Key Parameters Parameter | Condition | Typical Value | Maximum Value | Unit -------------------|-------------------------------|---------------|---------------|----- Drain-to-Source Voltage (VDS) | - | −19 V | −20.7 V | V Continuous Drain Current (ID) | TC = 25°C | - | −5 A | A On-Resistance (RDS(on)) | VGS = −4.5 V, ID = −3 A | 35 mΩ | 50 mΩ | mΩ Total Gate Charge (Qg) | VDS = −10 V, ID = −3 A | 8.5 nC | - | nC Thermal Resistance (RθJA) | Junction-to-Ambient | 125 °C/W | - | °C/W Package & Packaging Information Package Type: SOT-23 (marked as 3415A) Packaging Specifications: Minimum packaging: 3,000 units per reel (7-inch tape-and-reel) Inner box: 45,000 units Outer carton: 180,000 units Mechanical Dimensions: Conforms to SOT-23 standards, supports automated mounting; detailed dimensions are provided in the technical documentation. Quality & Reliability Complies with industrial-grade temperature ranges (storage temperature: −55°C to 150°C). Undergoes rigorous dynamic electrical characterization tests (switching times, capacitance characteristics, etc.) to ensure stable operation. Additional Technical Details & Supporting Diagrams Complete parameter curves (e.g., output characteristics, gate charge curves, safe operating area) and package drawings can be accessed by downloading the technical documentation: Guangdong Jiaxun Electronics Co., Ltd. Empowering electronic design through innovative technologies, dedicated to cost-effective power device solutions!

●Features ■ High‑density battery design achieving ultra‑low RDS(on) ■ Excellent on‑state resistance and maximum DC current capability Category: P‑channel enhancement‑mode MOSFET, plastic‑package MOSFET Applications: [Portable Devices] [DC/DC Converters] [Load Switches]

< 1234...11 >