Ya’an3M040120G(TO-263)

Features • Third-generation SiC MOSFET technology • High blocking voltage, low on-resistance • Low-capacitance, high-speed switching • Fast intrinsic diode with low reverse recovery (Qrr) Applications • Data center and telecom power supplies • Electric vehicle battery chargers • High-voltage DC/DC converters • Energy storage systems • Solar inverters Benefits • Reduced switching losses and minimized gate ringing • Improved system efficiency • Lower cooling requirements • Increased power density • Higher system switching frequency