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RushanMMBT2222A SOT-23

MMBT2222A SOT-23 Transistor type: NPN Collector–emitter breakdown voltage (Vceo): 40 V Collector current (Ic): 500 mA Power dissipation (Pd): 100 mW DC current gain (hFE@Ic, Vce): 100–300 PNP bipolar transistor NPN bipolar transistor is a derivative of our popular SOT‑23 three‑lead device.

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MMBT2222A SOT-23

Transistor type: NPN Collector–emitter breakdown voltage (Vceo): 40 V Collector current (Ic): 500 mA Power dissipation (Pd): 100 mW DC current gain (hFE@Ic, Vce): 100–300 PNP bipolar transistor NPN bipolar transistor is a byproduct of our popular SOT‑23 three‑lead device.