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Longyan3M080120K(TO-247-4L(K))
Features
● VDS 1200V
● ID 32A
● RDS(on) (VGS=10V) 80mΩ
● Third-generation SiC MOSFET technology
● Optimized package with separate driver-source pins
● Creepage distance between drain and source: 8mm
● High breakdown voltage, low on-resistance
● Low-capacitance, high-speed switching
● Fast intrinsic diode with low reverse recovery charge (Qrr)
Applications
● Motor drives
● Electric vehicle charging stations
● High-voltage DC/DC converters




