PingxiangMLS2309A SOT-23

●Product Overview ■VDS-60V ■ID-2.0A ■RDS(on) (at VGS = -10V) < 300 mΩ ■RDS(on) (at VGS = -4.5V) < 340 mΩ ●Overview ■Trench-type power low-voltage MOSFET technology ■Low RDS, high-density cell design ■High-speed switching Category: P-channel enhancement-mode field-effect transistor Applications: [Power Management] [Load Switching]

Product Description

●Product Overview
■VDS-60V
■ID-2.0A
■RDS(ON) (at VGS = -10 V) < 300 mΩ
■RDS(ON) (at VGS = -4.5 V) < 340 mΩ
●Overview
■Trench-Style Power Low-Voltage MOSFET Technology
■Low RDS, High-Density Cell Design
■High-speed switch

Category: P-Channel Enhancement Mode Field-Effect Transistor

Applications: [ Power Management ] [ Load Switch ]