PingdingshanMLS3400B SOT-23

■Description ●The AP3400BI employs advanced trench technology, delivering excellent RDS(on), low gate charge, and a gate voltage as low as 2.5 V. This device is suitable for battery protection and other switching applications. ■General Features ●V-DS = 30 V, I-D = 5.8 A ●RDS(on) < 28 mΩ @ V-GS = 10 V (typical: 26 mΩ) Category: N-channel Enhancement-mode MOSFET Applications: [Uninterruptible Power Supplies] [Battery Protection] [Load Switching]

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Product Description

■Description
●The AP3400BI employs advanced trench technology, delivering excellent RDS(on), low gate charge, and a gate voltage as low as 2.5 V. This device is suitable for battery‑protection circuits and other switching applications.

■General Characteristics
●V-DS=30V, I-D=5.8A
●R-DS(ON) < 28 mΩ @ V-GS = 10 V (typical: 26 mΩ)

Category: N-Channel Enhancement Mode MOSFET

Applications: [Uninterruptible Power Supply] [Battery Protection] [Load Switch]

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Guangdong Jiaxun Electronics Co., Ltd.

Address: Room 139, No. 8 Youxin Avenue, Wanjiang Subdistrict, Dongguan City, Guangdong Province
Mobile phone:18922939508
Phone:0769-2230 2199

Fax: 0769-2315 8049
Email:jiaxundz@qq.com
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