Jingdezhen3M080120K(TO-247-4L(K))

Features ● VDS 1200V ● ID 32A ● RDS(on) (VGS=10V) 80mΩ ● Third-generation SiC MOSFET technology ● Optimized package with separate driver-source pins ● Creepage distance between drain and source: 8mm ● High breakdown voltage, low on-resistance ● Low-capacitance, high-speed switching ● Fast intrinsic diode with low reverse recovery charge (Qrr) Applications ● Motor drives ● Electric vehicle charging stations ● High-voltage DC/DC converters