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HarbinMLS2307A SOT-23

●Features ■-30 V / -3.2 A, RDS(on) = 70 mΩ (maximum) @ VGS = -10 V ▲RDS(on) = 90 mΩ (maximum) @ VGS = -4.5 V ■Ultra-high-density die design for extremely low RDS(on) ■Reliable and robust ■SC-59 surface-mount package Category: P-channel enhancement-mode MOSFET Applications: [Portable Devices] [Power Management] [Battery-Powered Systems]

Product Description

●Features
■-30V/-3.2A, RDS(ON) = 70 mΩ (maximum) @ VGS = -10V
▲RDS(ON) = 90 mΩ (maximum) @ VGS = -4.5 V
■ Ultra-high-density battery design achieves an extremely low RDS(on)
■ Reliable and robust
■SC-59 surface-mount package

Category: P-Channel Enhancement Mode MOSFET

Applications: [Portable Devices] [Power Management] [Battery-Powered Systems]