Beijing3M040120G(TO-263)

Features • Third-generation SiC MOSFET technology • High blocking voltage, low on-resistance • Low-capacitance, high-speed switching • Fast intrinsic diode with low reverse recovery (Qrr) Applications • Data center and telecom power supplies • Electric vehicle battery chargers • High-voltage DC/DC converters • Energy storage systems • Solar inverters Benefits • Reduced switching losses and minimized gate ringing • Improved system efficiency • Lower cooling requirements • Increased power density • Higher system switching frequency

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BeijingProduct Center

BeijingSilicon carbide

BeijingTO-263(G)

Phone: 400-888-8888

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Contact Information

Guangdong Jiaxun Electronics Co., Ltd.

Address: Room 139, No. 8 Youxin Avenue, Wanjiang Subdistrict, Dongguan City, Guangdong Province
Mobile phone:18922939508
Phone:0769-2230 2199

Fax: 0769-2315 8049
Email:jiaxundz@qq.com
QQ: 75836771, 343109788
Website:www.jiaxundz.com

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