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STR1550 SOT-23
Electrical Limit Parameters Collector–Emitter Voltage (VCESO): 500 V Collector Peak Current (ICM): 1 A (pulse width < 5 ms) Maximum Power Dissipation (PTOT): 500 mW (at an ambient temperature of 25°C) Electrical Characteristics Collector Cut-off Current (ICBO): < 10 μA (VCB = 500 V) Saturation Voltage (VCE(sat)): ≤ 0.3 V (IC = 50 mA) DC Current Gain (hFE): 100–300 (IC = 50 mA) Thermal Management Thermal Resistance (Rth): 250 °C/W (based on a 1 cm² PCB heat-dissipating area) Mechanical and Packaging
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Product Description
Product Introduction: Guangdong Jiaxun Electronics STR1550 High-Voltage Fast-Switching NPN Power Transistor
Launched by Guangdong Jiaxun Electronics (Jiaxun Electronics) STR1550 It is a high‑performance, high‑voltage, fast‑switching NPN power transistor, specifically designed for high‑reliability, high‑density circuit applications. With its outstanding electrical performance and compact package, this device demonstrates exceptional suitability in areas such as LED driving and power management.
Core Features
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High pressure, high speed : Utilizing diffusion-collector planar technology, it supports up to 500V Its collector–emitter voltage (VCEO) is high, while also enabling fast switching to meet the demands of high-frequency applications.
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Excellent linearity : Maintains a stable DC current gain (ℎ𝐹𝐸hFE) within the 50 mA range, ensuring precise and reliable signal amplification.
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Micro-package : SOT-23 surface-mount package (dimensions only 2.75 × 3.04 mm), suitable for space-constrained PCB designs and compatible with automated pick-and-place assembly.
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Wide-temperature operation It can operate reliably in harsh environments ranging from **–65°C to 150°C**, making it suitable for industrial‑grade applications.
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Complementary model : The complementary PNP-type product STR2550 is provided to facilitate the design of symmetrical circuits.
Typical Applications
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LED driver circuit : Supports high-efficiency constant-current drive, suitable for LED lighting, backlight modules, and more.
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Switching power supply : Used in high-voltage switching applications such as flyback converters and DC-DC modules.
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Industrial Control : Applications requiring rapid switching, such as motor drives and relay control.
Key Performance Parameters
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Electrical Limit Parameters
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Collector–emitter voltage (VCEO): 500 V
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Collector peak current (𝐼𝐶𝑀ICM): 1 A (pulse width < 5 ms)
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Maximum power consumption (𝑃𝑇𝑂𝑇PTOT): 500 mW (at an ambient temperature of 25°C)
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Electrical Characteristics
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Collector cutoff current (𝐼𝐶𝐵𝑂ICBO): <10 μA (𝑉𝐶𝐵=500 V)
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Saturation Voltage Drop (𝑉𝐶𝐸(𝑠𝑎𝑡)): ≤0.3 V (𝐼𝐶=50𝑚𝐴)
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DC current gain (hFE): 100–300 (IC = 50 mA)
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Thermal management
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Thermal resistance (𝑅𝑡ℎ): 250°C/W (based on a 1 cm² PCB thermal dissipation area)
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Mechanics and Packaging
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SOT-23 package : Complies with industry standards, features a compact footprint (typical dimensions: 2.75 × 3.04 mm), and supports high-density packaging.
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Recommended Pad Design : Provides an optimized pad layout (see Figure 10) to ensure soldering reliability and reduce thermal stress.
Technological Advantages
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High reliability : By designing a planar edge‑terminal structure, the reverse‑bias safe operating area (RBSOA) is expanded, and the device’s shock‑resistance is enhanced.
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Energy-saving and efficient : Low saturation voltage drop (𝑉𝐶𝐸(𝑠𝑎𝑡)<0.3𝑉) reduces conduction losses and optimizes system efficiency.
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Temperature adaptability : Maintains stable performance across the entire temperature range (-55°C to 150°C), making it suitable for harsh environments.
About Jiaxun Electronics
Guangdong Jiaxun Electronics is dedicated to delivering high‑performance semiconductor solutions, with products spanning power devices and driver ICs, widely used in consumer electronics, industrial control, and the new energy sector. Thanks to its exceptional cost‑effectiveness and reliability, the STR1550 has become the preferred choice in the LED driver market.
STR1550—Empowering high-performance design to help you master high-pressure challenges!
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Guangdong Jiaxun Electronics Co., Ltd. is a Sino‑foreign joint venture high‑tech enterprise specializing in the R&D, manufacturing, sales, and technical services of discrete semiconductor devices. The company boasts a highly qualified R&D center with robust technological capabilities; through continuous innovation, its products are marketed worldwide, securing a leading position in the industry.
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