MLS03N04A SOT-23

Guangdong Jiaxun Electronics MLS03N04A 40V/3A N-Channel MOSFET Product Description Product Overview The MLS03N04A is an N-channel power device that leverages advanced trench‑type low‑voltage (LV) MOSFET technology, offering a 40V breakdown voltage and a continuous current rating of 3A. Its high‑density cell design delivers exceptionally low on‑state resistance (RDS(ON)), while supporting fast switching—making it ideal for efficient power management and load‑control applications. The device is packaged in SOT‑23, meeting industrial‑grade reliability standards. Key Features High‑Performance Parameters - Voltage and Current Ratings: - Drain‑Source Voltage (VDS): 40V (maximum) - Continuous Drain Current (ID): 3A (at VGS = 10V, TC = 25°C) - Pulse Drain Current (IDM): 12A (at TC = 25°C) - Ultra‑Low On‑State Resistance: - RDS(ON): 65 mΩ (at VGS = 10V, ID = 2.5A) / 95 mΩ (at VGS = 4.5V, ID = 1.5A) - Fast Switching Characteristics: - Turn‑On Delay Time: 4.2 ns - Turn‑Off Delay Time: 7.9 ns - Total Gate Charge (Qg): 5.5 nC (at VDS = 10V, ID = 3A) Electrical Reliability - Gate‑Source Voltage Rating (VGS): ±20V (maximum) - Drain‑Source Breakdown Voltage (BV DSS): 40V (at VGS = 0V, ID = 250 μA) - Low Leakage Current: - Zero‑Gate‑Voltage Drain Current (IDSS): <1 μA (at VDS = 40V) - Gate Leakage Current (IGSS): ±100 nA (at VGS = ±20V) Temperature Performance - Operating Junction Temperature (TJ): −50°C to 150°C - Thermal Resistance (RθJA): 150°C/W (based on a 1‑square‑inch, 2‑ounce copper pad) Application Areas - Battery Protection: Lithium‑ion battery charge/discharge management - Power Management: DC‑DC converters, load switches - Industrial Control: Motor drives, relay replacements - Consumer Electronics: Portable device power modules, USB power control Packaging and Ordering - Package Type: SOT‑23 (compact surface‑mount package; dimensions are specified in the datasheet) - Packaging Options: - Minimum Reel Quantity: 3,000 units per tape-and-reel - Full Carton Quantity: 180,000 units - Part Number Designation: MLS03N04A (with "4003" marking on the package) Product Advantages - High Efficiency: Low on‑state resistance minimizes power losses, enhancing overall system efficiency. - Rapid Response: Nanosecond‑level switching speeds make it suitable for high‑frequency circuit designs. - Superior Reliability: Wide operating temperature range and robust industrial‑grade voltage ratings ensure performance under demanding conditions. - Compact Design: The SOT‑23 package saves PCB space, enabling high‑density layouts. Typical Applications The MLS03N04A is widely used in power management modules for consumer electronics, industrial automation, new energy devices, and portable products, providing an ideal solution for optimizing energy efficiency and space utilization.

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Product Description

Guangdong Jiaxun Electronics MLS03N04A 40V/3A N-Channel MOSFET Product Description

Product Overview
The MLS03N04A is an N‑channel power device that leverages advanced trench‑type low‑voltage (LV) MOSFET technology, offering a 40 V breakdown voltage and a continuous current rating of 3 A. Its high‑density cell design delivers an ultra‑low on‑state resistance (RDS(ON)), while supporting high‑speed switching, making it ideal for efficient power management and load‑control applications. The device is packaged in SOT‑23 and meets industrial‑grade reliability standards.

Core Features

High-performance parameters
- Withstand Voltage and Current Capability ：
  - Drain-to-source voltage (VDS): 40 V (maximum)
  - Continuous Drain Current (ID): 3 A (VGS = 10 V, TC = 25 °C)
  - Pulse Drain Current (IDM): 12 A (TC = 25°C)
- Ultra-low on-resistance ：
  - RDS(ON) : 65 mΩ (VGS = 10 V, ID = 2.5 A) / 95 mΩ (VGS = 4.5 V, ID = 1.5 A)
- High-speed switching characteristics ：
  - Switch delay time: 4.2ns (Conduction) / 7.9ns (Off)
  - Total gate charge (Qg): 5.5 nC (VDS = 10 V, ID = 3 A)
Electrical Reliability
- Gate–source voltage rating (VGS): ±20 V (maximum)
- Drain-to-source breakdown voltage (BV DSS): 40 V (VGS = 0 V, ID = 250 μA)
- Low leakage current:
  - Drain-to-source leakage current at zero gate voltage (IDSS): <1 μA (VDS = 40 V)
  - Gate-to-source leakage current (IGSS): ±100 nA (VGS = ±20 V)
Temperature adaptability
- Junction operating temperature (TJ): -50°C to 150°C
- Thermal resistance (RθJA): 150 °C/W (based on a 1-square-inch, 2-ounce copper pad)

Application areas

Battery protection Lithium Battery Pack Charge-Discharge Management
Power Management : DC-DC converters, load switches
Industrial Control : Motor-driven, relay replacement
Consumer electronics : Portable device power module, USB power supply control

Packaging and Ordering

Package type : SOT-23 (compact surface-mount package; see the datasheet for dimensions)
Packaging Specifications ：
- Minimum packaging: 3,000 units per tape reel
- Carton quantity: 180,000 pieces
Model identifier : MLS03N04A (package marking “4003”)

Product Advantages

High efficiency and energy saving : Low on-resistance reduces power loss and improves system efficiency.
Quick response : Nanosecond-level switching speed, suitable for high-frequency circuit design.
High reliability : Wide temperature range and industrial-grade voltage‑withstand design, suitable for harsh environments.
Compact design : The SOT-23 package saves PCB space and supports high-density layouts.

Applicable Scenarios
Widely used in power management modules for consumer electronics, industrial automation, new energy equipment, and portable devices, it is an ideal solution for optimizing energy efficiency and space utilization.

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