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MLS3400B SOT-23
■Description ●The AP3400BI employs advanced trench technology, delivering excellent RDS(on), low gate charge, and a gate voltage as low as 2.5 V. This device is suitable for battery protection and other switching applications. ■General Features ●V-DS = 30 V, I-D = 5.8 A ●RDS(on) < 28 mΩ @ V-GS = 10 V (typical: 26 mΩ) Category: N-channel Enhancement-mode MOSFET Applications: [Uninterruptible Power Supplies] [Battery Protection] [Load Switching]
Product Description
■Description
●The AP3400BI employs advanced trench technology, delivering excellent RDS(on), low gate charge, and a gate voltage as low as 2.5 V. This device is suitable for battery‑protection circuits and other switching applications.
■General Characteristics
●V-DS=30V, I-D=5.8A
●R-DS(ON) < 28 mΩ @ V-GS = 10 V (typical: 26 mΩ)
Category: N-Channel Enhancement Mode MOSFET
Applications: [Uninterruptible Power Supply] [Battery Protection] [Load Switch]
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Guangdong Jiaxun Electronics Co., Ltd. is a Sino‑foreign joint venture high‑tech enterprise specializing in the R&D, manufacturing, sales, and technical services of discrete semiconductor devices. The company boasts a highly qualified R&D center with robust technological capabilities; through continuous innovation, its products are marketed worldwide, securing a leading position in the industry.
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