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3M080120K(TO-247-4L(K))
Features ● VDS 1200V ● ID 32A ● RDS(on) (VGS=10V) 80mΩ ● Third-generation SiC MOSFET technology ● Optimized package with separate driver-source pins ● Creepage distance between drain and source: 8mm ● High breakdown voltage, low on-resistance ● Low-capacitance, high-speed switching ● Fast intrinsic diode with low reverse recovery charge (Qrr) Applications ● Motor drives ● Electric vehicle charging stations ● High-voltage DC/DC converters
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Guangdong Jiaxun Electronics Co., Ltd. is a Sino‑foreign joint venture high‑tech enterprise specializing in the R&D, manufacturing, sales, and technical services of discrete semiconductor devices. The company boasts a highly qualified R&D center with robust technological capabilities; through continuous innovation, its products are marketed worldwide, securing a leading position in the industry.
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